The Effects of Proton Irradiation on SiGe:C HBTs
نویسندگان
چکیده
Abstract--The effects of 63MeV proton irradiation on SiGe:C HBTs are reported for the first time. The dc characteristics and neutral base recombination of these SiGe:C HBTs are investigated for proton fluences up to 5×10 p/cm. A comparison is made with SiGe HBTs fabricated in the same technology. Despite the fact that these SiGe:C HBTs degrade significantly during proton exposure, there is no indication that the carbon doping has any significant impact on the radiation response.
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تاریخ انتشار 2001